A novel route for synthesis, characterization of molybdenum diselenide thin films and their photovoltaic applications

被引:12
|
作者
Sathe, D. J. [1 ]
Chate, P. A. [2 ]
Hankare, P. P. [3 ]
Manikshete, A. H. [4 ]
Aswar, A. S. [5 ]
机构
[1] KITs Coll Engn, Dept Chem, Kolhapur, MS, India
[2] JSM Coll, Dept Chem, Alibag Raigad, MS, India
[3] Shivaji Univ, Dept Chem, Kolhapur 416004, MS, India
[4] Walchand Coll, Dept Chem, Solapur, MS, India
[5] SGB Amravati Univ, Dept Chem, Amravati, MS, India
关键词
TRANSITION-METAL DICHALCOGENIDES; SEMICONDUCTOR; ELECTRODES;
D O I
10.1007/s10854-012-0705-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Molybdenum diselenide thin films were deposited by chemical method. The precursor solution contains ammonium molybdate, sodium selenosulphite with hydrazine hydrate as a reducing agent. Various preparative conditions were optimized for the formation of thin films. The X-ray diffraction pattern shows that thin films have a layer-hexagonal phase. EDAX analysis shows that the films are nearly stoichiometric of Mo: Se: 1:2. Optical properties show a direct band gap nature with band gap energy 1.43 eV and having specific electrical conductivity in the order of 10(-5) (Omega cm)(-1). The configuration of fabricated cell is n-MoSe2 | NaI (2 M) + I-2 (1 M) | C (graphite). The photoelectrochemical characterization of the films is carried out by studying current-voltage characterization, capacitance-voltage and power output characteristics. The fill factor and efficiency of the cell were found to be 34.22 and 1.01 % respectively.
引用
收藏
页码:438 / 442
页数:5
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