A 0.5-5.5 GHz Low Even-Order Distortion CMOS Current-Reused Front-End for Wideband RF Receivers

被引:0
|
作者
Ye, R. -F. [1 ]
Chen, K. -S. [1 ]
Horng, T. -S. [1 ]
Wu, J. -M. [2 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 804, Taiwan
[2] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 824, Taiwan
关键词
Wideband front-end; noise cancellation LNA; current-commutating mixer; current-reused topology; LNA;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a novel RF current-reused front-end with noise cancellation LNA and current-commutating mixer using 0.18 mu m CMOS technology. The proposed design is applicable to a wideband receiver that converts a 0.5 - 5.5 GHz RF signal into a zero- or low-IF signal. A fully differential topology is adopted to suppress the even-order nonlinearity and common-mode noise. Additionally, the proposed approach incorporates capacitor cross-coupled common-gate (CCC-CG) and current-reused schemes to achieve low noise, input matching and power saving. Measurement results indicate a S-11 value lower than -10 dB, a noise figure of 3.1 - 3.6 dB, a conversion gain of 16.5 - 19.2 dB, an IIP3 of -4.9-2.4 dBm, and an IIP2 of 50 - 55.5 dBm over the entire RF bandwidth. While consuming 10.2 mA from a supply voltage of 1.8 V, the chip circuitry in the proposed method is especially attractive for its wideband low even-order distortion.
引用
收藏
页码:810 / 813
页数:4
相关论文
共 50 条
  • [31] A Low Noise and Low Power RF Front-End for 5.8-GHz DSRC Receiver in 0.13 μm CMOS
    Choi, Jaeyi
    Seo, Shin-Hyouk
    Moon, Hyunwon
    Nam, Ilku
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2011, 11 (01) : 59 - 64
  • [32] Low-voltage 1.9-GHz front-end receiver in 0.5-μm CMOS technology
    Abou-Allam, E
    Nisbet, JJ
    Maliepaard, MC
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (10) : 1434 - 1443
  • [33] A low power highly linear 2.4 GHz CMOS receiver front-end using current amplifier
    Kwon, I
    Lee, K
    ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2004, : 431 - 434
  • [34] 0.6-3-GHz Wideband Receiver RF Front-End With a Feedforward Noise and Distortion Cancellation Resistive-Feedback LNA
    Wang, Xiao
    Sturm, Johannes
    Yan, Na
    Tan, Xi
    Min, Hao
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (02) : 387 - 392
  • [35] A 2.4-GHz low-IF receiver for wideband WLAN in 0.6-μm CMOS -: Architecture and front-end
    Behbahani, F
    Leete, JC
    Kishigami, Y
    Roithmeier, A
    Hoshino, K
    Abidi, AA
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (12) : 1908 - 1916
  • [36] Design and implementation of a low-voltage 2.4-GHZ CMOS RF receiver front-end for wireless communication
    Liou, Wan-Rone
    Yeh, Mei-Ling
    Tsai, Chun-An
    Chang, Shun-Hsyung
    Journal of Marine Science and Technology, 2005, 13 (03): : 170 - 175
  • [37] Design of a 1.8GHz low-noise amplifier for RF front-end in a 0.8μm CMOS technology
    Park, S
    Kim, W
    IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 2001, 47 (01) : 10 - 15
  • [38] A 5.4 mW low-noise high-gain CMOS RF front-end circuit for portable GPS receivers
    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    不详
    Pan Tao Ti Hsueh Pao, 2008, 10 (1963-1967):
  • [39] A 2.4 GHz low-IF receiver for wideband WLAN in 0.6μm CMOS -: Part I:: Architecture and front-end circuits
    Behbahani, F
    Leete, JC
    Kishigami, Y
    Roithmeier, A
    Hoshino, K
    Abidi, AA
    MICROELECTRONIC ENGINEERING, 2000, 54 (1-2) : 63 - 71
  • [40] A 1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer
    Nakayama, M
    Horiguchi, K
    Yamamoto, K
    Yoshii, Y
    Sugiyama, S
    Suematsu, N
    Takagi, T
    IEICE TRANSACTIONS ON ELECTRONICS, 1999, E82C (05): : 717 - 724