Novel silicon n-in-p pixel sensors for the future ATLAS upgrades

被引：1
|
作者：
La Rosa, A. [1 ]
Gallrapp, C. [2 ]
Macchiolo, A. [3 ]
Nisius, R. [3 ]
Pernegger, H. [2 ]
Richter, R. H. [4 ]
Weigell, P. [3 ]
机构：
[1] Univ Geneva, Sect Phys DPNC, CH-1211 Geneva 4, Switzerland
[2] CERN, CH-1211 Geneva 23, Switzerland
[3] Werner Heisenberg Inst, Max Planck Inst Phys, D-80805 Munich, Germany
[4] Max Planck Inst Halbleiterlab, D-81739 Munich, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 718卷
关键词：
Pixel detector; n-in-p silicon sensors; Radiation hardness; HL-LHC; ATLAS;
D O I：
10.1016/j.nima.2012.10.091
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10(16) 1 - MeV n(eq) cm(-2), and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：329 / 330
页数：2
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