Gas indiffusion contribution to impedance in tin oxide thick films

被引：17
|
作者：
Ponce, M. A. [1 ]
Malagu, C. [2 ]
Carotta, M. C. [2 ]
Martinelli, G. [2 ]
Aldao, C. M. [1 ]
机构：
[1] Univ Nacl Mar del Plata, CONICET, Inst Mat Sci & Technol, Mar Del Plata, Buenos Aires, Argentina
[2] Univ Ferrara, Dept Phys, I-44100 Ferrara, Italy
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 05期
关键词：
D O I：
10.1063/1.2975216
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ac electrical resistance and capacitance of SnO(2) thick films under vacuum and air atmosphere were analyzed using the Cole-Cole plot. To fit the experimental results, a simple circuit model that considers a capacitance and a resistance in parallel was employed. An explanation for the resistance variation considering spherical grains with different characteristics is proposed. A careful analysis of the resulting depletion layers and doping levels gives evidence for gas diffusion into the grains. (C) 2008 American Institute of Physics.
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