Gas indiffusion contribution to impedance in tin oxide thick films

被引：17

作者：

Ponce, M. A. ^{[1
]}

Malagu, C. ^{[2
]}

Carotta, M. C. ^{[2
]}

Martinelli, G. ^{[2
]}

Aldao, C. M. ^{[1
]}

机构：

[1] Univ Nacl Mar del Plata, CONICET, Inst Mat Sci & Technol, Mar Del Plata, Buenos Aires, Argentina

[2] Univ Ferrara, Dept Phys, I-44100 Ferrara, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 05期

关键词：

D O I：

10.1063/1.2975216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ac electrical resistance and capacitance of SnO(2) thick films under vacuum and air atmosphere were analyzed using the Cole-Cole plot. To fit the experimental results, a simple circuit model that considers a capacitance and a resistance in parallel was employed. An explanation for the resistance variation considering spherical grains with different characteristics is proposed. A careful analysis of the resulting depletion layers and doping levels gives evidence for gas diffusion into the grains. (C) 2008 American Institute of Physics.

引用

页数：5

共 50 条

[1] Gas indiffusion contribution to impedance in tin oxide thick films
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