Recent advances in spintronics for emerging memory, devices

被引:11
|
作者
Kang, Seung H. [1 ]
机构
[1] Qualcomm Inc, San Diego, CA 92121 USA
关键词
D O I
10.1007/s11837-008-0113-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The emergingfield of spintronics has the potential to bring game-changing opportunities to nanoelectronic technologies far beyond its traditional contribution to mass storage applications such as hard disk drives. The value proposition is timely since the dominant semiconductor industry is in pursuit of "More-than-Moore" to extend the technology roadmap or to create functional diversifications through enhanced system platforms. This article overviews a promising spintronic device in conjunction with recent breakthroughs in tunnel magnetoresistance andspin-transfer-torque magnetization switching.
引用
收藏
页码:28 / 33
页数:6
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