Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

被引：3
|
作者：
Jeong, Jaewook [1 ]
Kim, Joonwoo [2 ]
Kim, Donghyun [3 ]
Jeon, Heonsu [4 ]
Jeong, Soon Moon [2 ]
Hong, Yongtaek [3 ]
机构：
[1] Chungbuk Natl Univ, Sch Informat & Commun Engn, Cheongju, South Korea
[2] Daegu Gyeongbuk Inst Sci & Technol, Div Nano & Energy Convergence Res, Daegu, South Korea
[3] Seoul Natl Univ, Dept Elect & Commun Engn, Seoul, South Korea
[4] Seoul Natl Univ, Dept Phys & Astron, Seoul, South Korea
来源：
AIP ADVANCES | 2016年 / 6卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
FABRICATION;
D O I：
10.1063/1.4961379
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer. (C) 2016 Author(s).
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收藏
页数：8
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