Atomistic simulation of grain boundaries in alumina

被引:16
|
作者
Exner, M
Finnis, MW
机构
关键词
structure and characterization of interfaces; alumina; computer simulation; defects at grain boundaries;
D O I
10.4028/www.scientific.net/MSF.207-209.225
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results of theoretical calculations of equilibrium structures of grain boundaries in alpha-Al2O3 are presented, The simulations are based on an atomistic model involving lattice statics, molecular dynamics, and Monte Carlo in which empirical and quantum mechanically derived interionic pair potentials are employed. Calculations carried out on the basis of empirical potentials indicate that trivalent impurities Y3+, Fe3+, and La3+ segregate to the (10 (1) over bar 4) grain boundary. The energy of segregation is approximately quadratically dependent on the the differences in volume between the dopant and the host ion.
引用
收藏
页码:225 / 228
页数:4
相关论文
共 50 条
  • [1] Atomistic simulation of dislocation emission in nanosized grain boundaries
    Derlet, PM
    Van Swygenhoven, H
    Hasnaoui, A
    [J]. PHILOSOPHICAL MAGAZINE, 2003, 83 (31-34) : 3569 - 3575
  • [2] Free energy of grain boundaries from atomistic computer simulation
    Ganguly, Saswati
    Horbach, Juergen
    [J]. PHYSICAL REVIEW E, 2018, 98 (03)
  • [3] Atomistic Simulation of Self-Diffusion in Nickel Grain Boundaries
    Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg
    620108, Russia
    [J]. Bull. Russ. Acad. Sci. Phys., 9 (1368-1375): : 1368 - 1375
  • [4] Atomistic simulation of hydrogen diffusion at tilt grain boundaries in vanadium
    Jae-Hyeok Shim
    Won-Seok Ko
    Jin-Yoo Suh
    Young-Su Lee
    Byeong-Joo Lee
    [J]. Metals and Materials International, 2013, 19 : 1221 - 1225
  • [5] Atomistic simulation study of dislocations and grain boundaries in nanoscale semiconductors
    Masuda-Jindo, K
    Kikuchi, R
    Obata, S
    Menon, M
    [J]. POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 375 - 380
  • [6] Atomistic simulation of [001] symmetrical tilt grain boundaries in NiAl
    Mishin, Y
    Farkas, D
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 78 (01): : 29 - 56
  • [7] Atomistic simulation study of grain boundaries and dislocations in nanoscale semiconductors
    Masuda-Jindo, K
    Menon, M
    Kikuchi, R
    [J]. POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 231 - 236
  • [8] Atomistic simulation of hydrogen diffusion at tilt grain boundaries in vanadium
    Shim, Jae-Hyeok
    Ko, Won-Seok
    Suh, Jin-Yoo
    Lee, Young-Su
    Lee, Byeong-Joo
    [J]. METALS AND MATERIALS INTERNATIONAL, 2013, 19 (06) : 1221 - 1225
  • [9] Atomistic simulation of grain boundaries, triple junctions and related disclinations
    Shenderova, OA
    Brenner, DW
    [J]. LOCAL LATTICE ROTATIONS AND DISCLINATIONS IN MICROSTRUCTURES OF DISTORTED CRYSTALLINE MATERIALS, 2002, 87 : 205 - 213
  • [10] A MONTE-CARLO ATOMISTIC SIMULATION OF GRAIN-BOUNDARIES
    CHANG, R
    [J]. SCRIPTA METALLURGICA, 1980, 14 (07): : 779 - 784