Simulation of hydrogen penetration in silicon under wet chemical etching

被引：4
|
作者：
Feklisova, O
Knack, S
Yakimov, EB [1 ]
Yarykin, N
Weber, J
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia
[2] Tech Univ Dresden, D-01062 Dresden, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
基金：
俄罗斯基础研究基金会;
关键词：
silicon; hydrogen; diffusion; shallow acceptor passivation;
D O I：
10.1016/S0921-4526(01)00726-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The depth profiles of boron-hydrogen pairs formed in Si crystals by wet chemical etching (WCE) are calculated. The evolution of boron-hydrogen pair distribution after WCE is observed. The fits to the experimental profiles allow to estimate the hydrogen diffusivity at room temperature as D-H = 2.4 x 10(-10) cm(2)/s. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：213 / 215
页数：3
相关论文
共 50 条
  • [41] WET CHEMICAL ETCHING OF ALN
    MILEHAM, JR
    PEARTON, SJ
    ABERNATHY, CR
    MACKENZIE, JD
    SHUL, RJ
    KILCOYNE, SP
    APPLIED PHYSICS LETTERS, 1995, 67 (08) : 1119 - 1121
  • [42] Surface texturization of monocristalin silicon by wet chemical etching for high efficiency silicon solar cells
    Manea, E
    Budianu, E
    Purica, M
    Babarada, F
    Cernica, I
    Moagar-Poladian, V
    2004 International Semiconductor Conference, Vols 1and 2, Proceedings, 2004, : 225 - 228
  • [43] Porous silicon with crystallographically defined macropores created by wet-chemical etching
    Dudley, Margaret E.
    Kolasinski, Kurt W.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2007, 234
  • [44] Approaches in Wet Chemical Etching for Defect Delineation in Silicon-on-Insulator Substrates
    Maehliss, J.
    Hakim, R.
    Abbadie, A.
    Brunier, F.
    Kolbesen, B. O.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (02) : D107 - D113
  • [45] Wet chemical etching of silicon {111}: Etch pit analysis by the Lichtfigur method
    Shah, Ismail A.
    van der Wolf, Benjamin M. A.
    van Enckevort, Willem J. P.
    Vlieg, Elias
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (05) : 1371 - 1377
  • [46] Wet chemical etching of single-bore microstructured silicon dioxide fibers
    Giddings, Josef A.
    Stokes, Yvonne M.
    Bachus, Kyle J.
    Ebendorff-Heidepriem, Heike
    PHYSICS OF FLUIDS, 2020, 32 (07)
  • [47] NONUNIFORM WET ETCHING OF SILICON DIOXIDE
    MCANDREWS, K
    SUKANEK, PC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (03) : 863 - 866
  • [48] Wet Etching of Silicon in Planar Nanochannels
    Zhong, Yiding
    Park, Dohyun
    Xiao, Siyang
    Hu, Shan
    Zheng, Liangwei
    Duan, Chuanhua
    LANGMUIR, 2024, 40 (18) : 9501 - 9508
  • [49] CHEMICAL ETCHING OF SILICON
    HALLAS, CE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : C318 - &
  • [50] Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher
    Habuka, Hitoshi
    Mizuno, Kosuke
    Ohashi, Shintaro
    Kinoshita, Tetsuo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (06) : P264 - P267
12345