Simulation of hydrogen penetration in silicon under wet chemical etching

被引：4
|
作者：
Feklisova, O
Knack, S
Yakimov, EB [1 ]
Yarykin, N
Weber, J
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia
[2] Tech Univ Dresden, D-01062 Dresden, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
基金：
俄罗斯基础研究基金会;
关键词：
silicon; hydrogen; diffusion; shallow acceptor passivation;
D O I：
10.1016/S0921-4526(01)00726-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The depth profiles of boron-hydrogen pairs formed in Si crystals by wet chemical etching (WCE) are calculated. The evolution of boron-hydrogen pair distribution after WCE is observed. The fits to the experimental profiles allow to estimate the hydrogen diffusivity at room temperature as D-H = 2.4 x 10(-10) cm(2)/s. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：213 / 215
页数：3
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