Development and Characterization of TaN Thin Film Resistor with CMOS Compatible Fabrication Process

被引：0

作者：

Kang, Xiaoxu ^{[1
]}

Zhu, Limin ^{[2
]}

Zhu, Xingwang ^{[2
]}

Zuo, Qingyun ^{[1
]}

Zhong, Xiaolan ^{[1
]}

Chen, Shoumian ^{[1
]}

Zhao, Yuhang ^{[1
]}

Liu, Shanshan ^{[2
]}

Lu, Hanwei ^{[2
]}

Wang, Jianmin ^{[2
]}

Wang, Wei ^{[2
]}

Zhang, Bo ^{[2
]}

机构：

[1] Shanghai IC R&D Ctr, Proc Technol Dept, Shanghai 201210, Peoples R China

[2] Shanghai Huahong Grace Semicond Mfg Corp, PIE Dept 3, Shanghai 201206, Peoples R China

来源：

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2017年

关键词：

TaN Thin Film Resistor; Sheet Resistance; TCR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polysilicon is the commonly used material for resistor device in standard CMOS technology. Due to the process limitation, polysilicon resistor has the problem of high resistance variation and high temperature coefficient of resistance (TCR), which may cause performance degradation in analog circuit design. In this work, high resistivity TaN metal film was developed and integrated in thin TaN metal resistor structure, which was fabricated on 200mm wafer CMOS Cu-BEOL. The metal resistor performance was evaluated to check its potential value in CMOS resistor device application.

引用

页码：160 / 162

页数：3

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