New approach for passivation of Ga2O3-In2O3-ZnO thin film transistors

被引：0

作者：

Kim, Sun Il ^{[1
]}

Kim, Chang Jung ^{[1
]}

Park, Jae Chul ^{[1
]}

Song, Ihun ^{[1
]}

Kang, Dong Hun ^{[1
]}

Lim, Hyuck ^{[1
]}

Kim, Sang Wook ^{[1
]}

Lee, Eunha ^{[2
]}

Lee, Jae Chul ^{[2
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, San 14 Nonseo Dong, Yongin 449711, Gyunggi Do, South Korea

[2] Samsung Adv Inst Technol, Anal Engn Ctr, San 14 Nonseo Dong, Yongin 449711, Gyunggi Do, South Korea

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We successfully integrate the Ga2O3-In2O3-ZnO (GIZO) thin film transistors (TFTs) under conventional dry etching and passivation process using a novel capping layer. The passivated TFT shows a superior stability performance which has the threshold voltage shift of less than 0.6 V at 3 uA and 60 degrees C in 100 hours. This is very promising results for applications in driving TFT for large area active matrix OLED display.

引用

页码：583 / +

页数：2

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