Semiconductor technology choices for ultrawide-band (UWB) systems

被引：0

作者：

Harame, DL ^{[1
]}

Wang, X ^{[1
]}

Jagannathan, B ^{[1
]}

Perkarik, J ^{[1
]}

Watts, J ^{[1
]}

Sheridan, D ^{[1
]}

Cottrell, P ^{[1
]}

Greenberg, D ^{[1
]}

Freeman, G ^{[1
]}

Newton, K ^{[1
]}

Graf, M ^{[1
]}

Mina, E ^{[1
]}

Joseph, A ^{[1
]}

Dunn, J ^{[1
]}

机构：

[1] IBM Corp, Syst & Technol Grp, Essex Jct, VT 05452 USA

来源：

2005 IEEE INTERNATIONAL CONFERENCE ON ULTRA-WIDEBAND (ICU) | 2005年

关键词：

CMOS analog integrated circuits; semiconductor devices; millimeter wave bipolar transistor amplifiers; SiGe;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology will have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BICNIOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems will be System in a Package. The low cost favors CNIOS.

引用

页码：724 / 733

页数：10

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