Internal cooling in a semiconductor laser diode

被引：26
|
作者：
Pipe, KP
Ram, RJ
Shakouri, A
机构：
[1] MIT, Res Lab Elect, Cambridge, MA 02139 USA
[2] Univ Calif Santa Cruz, Jack Baskin Sch Engn, Santa Cruz, CA 95064 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 04期
基金：
美国国家科学基金会;
关键词：
electrothermal effects; lasers; laser thermal factors; photothermal effects; semiconductor lasers; thermionic emission; thermionic energy conversion; thermoelectric devices; thermoelectric energy conversion; thermoelectricity;
D O I：
10.1109/68.992575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A thermal model of a diode laser structure is developed which includes a bipolar thermoelectric term not included in previous models. It is shown that heterostructure band offsets can be chosen so that there are thermoelectric cooling sources near the active region; this method of cooling is internal to the device itself, as opposed to temperature stabilization schemes which employ an external cooler. A novel laser structure is proposed that is capable of internal cooling in the Ga1-xInxAsySb1-y-GaSb material system with lambda = 2.64 mum.
引用
收藏
页码：453 / 455
页数：3
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