Experimental demonstration of all-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier

被引：1

作者：

Soto, H ^{[1
]}

Topomonzo, J ^{[1
]}

Erasme, D ^{[1
]}

Guekos, G ^{[1
]}

机构：

[1] Ctr Invest Cientif & Estudios Super Ensenada Mexi, Div Fis APlicada, Ensenada 22860, Baja California, Mexico

来源：

APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS | 2001年 / 4580卷

关键词：

optoelectronic devices; semiconductor optical amplifiers; optical logic devices; optical propagation in nonlinear media; optical waveguides; Boolean functions;

D O I：

10.1117/12.444953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this communication, we demonstrate experimentally a new design for all-optical AND and NAND gates operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam. The all-optical gates here described differ from other ones developed before using semiconductor optical amplifiers by their ability to operate on non-degenerate input signals with an output signal wavelength independent of the input signals wavelength.

引用

页码：141 / 148

页数：4

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