All-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier

被引：1
|
作者：
Soto, H [1 ]
Díaz, CA [1 ]
机构：
[1] CICESE Fis Aplicada, Carretara Tijuana Ensenada, Ensenada 22860, Baja California, Mexico
来源：
4TH IBEROAMERICAN MEETING ON OPTICS AND 7TH LATIN AMERICAN MEETING ON OPTICS, LASERS, AND THEIR APPLICATIONS | 2001年 / 4419卷
关键词：
optoelectronic devices; semiconductor optical amplifiers; optical logic devices; optical propagation in nonlinear media; optical waveguides; boolean functions;
D O I：
10.1117/12.437212
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this communication, we demonstrate experimentally the fulfillment of all-optical AND and NAND gates using the crosspolarization modulation effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam.
引用
收藏
页码：383 / 386
页数：4
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