Assessment of SI GaAs particle detectors

被引：5

作者：

Berwick, K ^{[1
]}

Brozel, MR ^{[1
]}

Buttar, CM ^{[1
]}

Sellin, P ^{[1
]}

Young, SM ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

charge collection coefficient; minimum ionizing particles; thermally stimulated current;

D O I：

10.1016/S0921-5107(96)01815-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements of the charge collection efficiency (CCE) of radiation detectors fabricated from semi-insulating GaAs wafers have indicated that the CCE is reduced principally by trapping of electrons. Further measurements on wafers which have different thermal histories have been undertaken in order to identify the electron traps responsible for reducing the CCE of these devices. A correlation between CCE and electrical resistivity has been observed. Our data is consistent with a dominant dependence of CCE on the concentration of the ionized deep donor, EL2(+). (C) 1997 Elsevier Science S.A.

引用

页码：330 / 333

页数：4

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