Effect of compositional disorder on the optical properties of Cd1-xZnxTe

被引：4
|
作者：
Suzuki, K [1 ]
Seto, S
Imai, K
Sawada, T
Neukirch, U
Gutowski, J
机构：
[1] Hokkaido Inst Technol, Sapporo, Hokkaido 0068585, Japan
[2] Ishikawa Natl Coll Technol, Kahoku, Ishikawa 9290392, Japan
[3] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 06期
关键词：
CdZnTe; compositional disorder; lifetimes luminescence;
D O I：
10.1007/s11664-999-0070-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time-resolved as well as time-integrated luminescence of a bulk grown undoped Cd0.12Zn0.88Te crystal is measured to investigate the effect of compositional disorder on the recombination dynamics. The temporal behavior of the neutral-donor-bound exciton emission is well expressed by a simple exponential rise and decay. However, non-exponential rise and decay are observed for the acceptor-bound-exciton emission. It is shown that by introducing an intermediate state for the transition, the temporal behavior, especially the rising edge, of the acceptor bound exciton emission can well be described by a rate equation model.
引用
收藏
页码：785 / 788
页数：4
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