Experimental demonstration of integrated magneto electric and spin-orbit building blocks implementing energy-efficient logic

被引：0

作者：

Lin, Chia-Ching ^{[1
]}

Gosavi, Tanay ^{[1
]}

Nikonov, Dmitri ^{[1
]}

Huang, Yen-Lin ^{[4
,5
]}

Prasad, Bhagwati ^{[4
,5
]}

Choi, WonYoung ^{[6
]}

Van Tuong Pham ^{[6
]}

Groen, Inge ^{[6
]}

Chen, Jun-Yang ^{[7
]}

Mahendra, D. C. ^{[7
]}

Liu, Huichu ^{[2
]}

Oguz, Kaan ^{[1
]}

Walker, Emily S. ^{[1
]}

Plombon, John ^{[1
]}

Buford, Benjamin ^{[3
]}

Naylor, Carl H. ^{[1
]}

Wang, Jian-Ping ^{[7
]}

Casanova, Felix ^{[6
]}

Ramesh, Ramamoorthy ^{[4
,5
]}

Young, Ian A. ^{[1
]}

机构：

[1] Intel Corp, Components Res, Hillsboro, OR 97124 USA

[2] Intel Corp, Intel Labs, Santa Clara, CA USA

[3] Intel Corp, CQN, Hillsboro, OR USA

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[6] CIC NanoGUNE, Donostia San Sebastian 20018, Basque Country, Spain

[7] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN USA

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

600 mV magneto-electric switching in 30 nm Ladoped BiFeO3 multiferroic oxide and a proof of concept 7 mu V spin-orbit signal output in Pt / CoFe local spin injection device with 100 mu A supply current were experimentally demonstrated at room temperature for the 1st time. Also demonstrated was a path towards 70 mV spin orbit output using Bi2Se3 in a local spin injection device. These are key accomplishments for WRITE and READ building blocks, respectively, toward realization of a magneto-electric spin-orbit (MESO) energy-efficient logic device. Moreover, the 1st generation of a MESO logic device with a functional READ unit is demonstrated.

引用

页数：4

共 25 条

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