Experimental demonstration of integrated magneto electric and spin-orbit building blocks implementing energy-efficient logic

被引:0
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作者
Lin, Chia-Ching [1 ]
Gosavi, Tanay [1 ]
Nikonov, Dmitri [1 ]
Huang, Yen-Lin [4 ,5 ]
Prasad, Bhagwati [4 ,5 ]
Choi, WonYoung [6 ]
Van Tuong Pham [6 ]
Groen, Inge [6 ]
Chen, Jun-Yang [7 ]
Mahendra, D. C. [7 ]
Liu, Huichu [2 ]
Oguz, Kaan [1 ]
Walker, Emily S. [1 ]
Plombon, John [1 ]
Buford, Benjamin [3 ]
Naylor, Carl H. [1 ]
Wang, Jian-Ping [7 ]
Casanova, Felix [6 ]
Ramesh, Ramamoorthy [4 ,5 ]
Young, Ian A. [1 ]
机构
[1] Intel Corp, Components Res, Hillsboro, OR 97124 USA
[2] Intel Corp, Intel Labs, Santa Clara, CA USA
[3] Intel Corp, CQN, Hillsboro, OR USA
[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[5] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[6] CIC NanoGUNE, Donostia San Sebastian 20018, Basque Country, Spain
[7] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN USA
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
600 mV magneto-electric switching in 30 nm Ladoped BiFeO3 multiferroic oxide and a proof of concept 7 mu V spin-orbit signal output in Pt / CoFe local spin injection device with 100 mu A supply current were experimentally demonstrated at room temperature for the 1st time. Also demonstrated was a path towards 70 mV spin orbit output using Bi2Se3 in a local spin injection device. These are key accomplishments for WRITE and READ building blocks, respectively, toward realization of a magneto-electric spin-orbit (MESO) energy-efficient logic device. Moreover, the 1st generation of a MESO logic device with a functional READ unit is demonstrated.
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页数:4
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