Compact SiC Power Module With Integrated Power Delivery and Cooling

被引:1
|
作者
Muslu, Ahmet Mete [1 ]
Smet, Vanessa [1 ]
Joshi, Yogendra [1 ]
机构
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
关键词
Cooling; Thermal management of electronics; Thermal resistance; Cold plates; Silicon carbide; Power electronics; High power density; integrated cooling; near-junction cooling; power electronics; thermal management; HEAT-TRANSFER CHARACTERISTICS; THERMAL MANAGEMENT;
D O I
10.1109/TCPMT.2022.3231804
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As the transition from Si to SiC power devices rapidly grows, new packaging architectures need to be developed to fully benefit from the desired characteristics of SiC technology. The present study offers a highly integrated package (IP) with current carrier electrical feedthroughs that simultaneously combine power delivery and cooling functions. The thermal performance of the proposed solution is compared with the conventional package in a half-bridge configuration of a 50-kW two-level three-phase voltage source inverter (VSI). The specific thermal resistance of a power package is reduced by 13.5% in the proposed approach, showing an increased benefit at higher pumping power and heat flux conditions. Furthermore, design challenges are explored associated with the near-junction cooling as the performance is pushed toward 1 kW/cm(2). Unlike the previous studies considering T-j as the main design constraint, the limiting parameter is found to shift to the maximum coolant temperature. With the design modifications focusing on overcoming the flash point limit of coolant, the specific thermal resistance is further reduced to 0.099 cm(2)middot(?)C/W at 1 kW/cm(2) at the expense of a 36.5% increase in the package volume. The findings of the study make a clear case for the need of innovative solutions to extract the highest benefit from integrated cooling at increased power density levels of next-generation inverters.
引用
收藏
页码:1939 / 1948
页数:10
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