Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane

In atmospheric chemical vapor deposition of silicon with H-2-diluted SiH2Cl2 on Si(111), the kinetics of defect nucleation for stacking fault, dislocation and poly-Si was investigated as a function of growth temperature and SiH2Cl2 flow rate. In comparison to an Arrhenius plot of growth rate, it was observed that stacking fault and dislocation are nucleated appreciably in the surface-reaction rate-limited temperature region. Moreover, we found that the stacking fault density increased as a parabolic function of SiH2Cl2 volume concentration, c(vol), and the dislocation density increased almost linearly with c(vol), while no significant increase was then observed for the poly-Si density. The stacking fault and dislocation densities had the almost same incubation c(vol) below which no defects appeared. These observations indicate that the surface adsorbate gives rise to the nucleation of stacking fault and dislocation and the surface adsorbate related nucleation mechanism of stacking fault is different from that of dislocation.