A study of ion-implanted semiconductor nanostructures

被引：1
|
作者：
Boero, M
Inkson, JC
Faini, G
Vieu, C
Laruelle, F
Bedel, E
Fontaine, C
机构：
[1] CNRS,L2M,F-92225 BAGNEUX,FRANCE
[2] CNRS,LAAS,F-31077 TOULOUSE,FRANCE
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
关键词：
electrical transport measurements; gallium arsenide; ion implantation; models of non-equilibrium phenomena; semiconductor-semiconductor heterostructures; tunneling;
D O I：
10.1016/S0039-6028(96)01372-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report on the experimental evidence for quantum confinement in the transport properties of quantum dots fabricated by a novel technique. This technique allows us to confine the electron motion only in the quantum dot, leading to 3D-0D-3D resonant tunnelling transport. A theoretical framework has been developed at the same time to investigate 3D-0D-3D transport devices. The theoretical results agree well with the experimental observations, opening the possibility of directly probing the wavefunctions of 0D structures.
引用
收藏
页码：103 / 107
页数：5
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