Reduction of Graphene Oxide by Atomic Hydrogen Annealing

被引：0
|
作者：
Heya, Akira [1 ]
Matsuo, Naoto [1 ]
机构：
[1] Univ Hyogo, Dept Mat & Synchrotron Radiat Engn, 2167 Shosha, Himeji, Hyogo 6712280, Japan
来源：
2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2016年
关键词：
CHEMICAL-VAPOR-DEPOSITION; SURFACE-MODIFICATION; FILMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 degrees C, sample temperature of 220 degrees C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.
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页码：47 / 48
页数：2
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