Fault Isolation Of Die Level Crystal Defect Failure Mechanism Through OBIRCH Analysis And Micro-probing

被引：0
|
作者：
Lee, N. S. [1 ]
Yong, F. K. [1 ]
机构：
[1] Infineon Technol Kulim Sdn Bhd, Lot 10 & 11,Jalan Hitech 7,Ind Zone Phase 2, Kulim 09000, Kedah Darul Ama, Malaysia
来源：
Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Generally, crystal defect is able to induce photon emission event for detection by emission microscopy (EMMI) equipment. However, due to thick, dense metallization and high doped substrate, effective detection by EMMI alone is not always reliable. Thus, further isolation, layout information and verification are required through OBIRCH analysis, CAD navigation and micro-probing sequence respectively.
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页码：197 / 200
页数：4
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