20 Gbps operation of membrane-based GaInAs/InP waveguide-type p-i-n photodiode bonded on Si substrate

被引：16

作者：

Gu, Zhichen ^{[1
]}

Inoue, Daisuke ^{[2
]}

Amemiya, Tomohiro ^{[1
,2
]}

Nishiyama, Nobuhiko ^{[1
,2
]}

Arai, Shigehisa ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, IIR, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 02期

关键词：

FUTURE COPPER INTERCONNECTS; INJECTION; HETEROSTRUCTURE; PHOTODETECTORS; TECHNOLOGY; SILICON;

D O I：

10.7567/APEX.11.022102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95A/W is estimated for a device length of 30 mu m. The 3 dB cutoff frequency is measured to be 13.3GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 x 10(-9) is obtained at data rates of 20 and 10 Gbps with input powers of % 10 and % 13 dBm, respectively. (c) 2018 The Japan Society of Applied Physics

引用

页数：4

共 36 条

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