Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe2 thin films

被引：7
|
作者：
Thiru, Sathiabama [1 ]
Fujita, Miki [1 ,3 ]
Kawaharazuka, Atsushi [2 ,3 ]
Horikoshi, Yoshiji [1 ,3 ]
机构：
[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Waseda Univ, Waseda Inst Adv Study, Shinjuku Ku, Tokyo 1698050, Japan
[3] CREST, JST, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 113卷 / 02期
基金：
日本学术振兴会;
关键词：
LAYERS; EFFICIENCY;
D O I：
10.1007/s00339-013-7951-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence (PL) characteristics have been studied on undoped and Si-doped CuGaSe2 single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-to-acceptor transition. The Si doping to CuGaSe2 produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.
引用
收藏
页码：257 / 261
页数：5
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