Molecular Precursor Species and Their Effects on the Energy Band-Gap of Hydrazine Solution Processed CuIn(S,Se)2 films

被引：0

作者：

Chung, Choong-Heui ^{[1
]}

Lei, Bao ^{[1
]}

Bob, Brion ^{[1
]}

Duan, Hsin-Sheng ^{[1
]}

Li, Sheng-Han ^{[1
]}

Hou, William W. ^{[1
]}

Yang, Wenbing ^{[1
]}

Yang, Yang ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

Molecular precursors; band gaps; photovoltaic materials; CuInSe2;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We investigate the molecular species present in hydrazine CuIn(Se,S)(2) precursor solutions and their effects on the band-gap of final CuIn(Se,S)(2) films. [Cu6S4](2-) ions and [In-2(Se,S)(4)](2-) ions are present. Sulfur from [In-2(Se,S)(4)](2-) is more effectively incorporated into the final material. This finding makes it possible to precisely control the band gap of CuIn(Se,S)(2) films by adjusting the S/Se ratio of the [In-2(Se,S)(4)](2-) ions in the final precursor solution. These results will enable the precise adjustment and optimization of the energy band-gap in solution-processed CuIn(Se,S)(2) absorber layers for the future fabrication of improved photovoltaic devices.

引用

页码：2640 / 2643

页数：4

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