Control of grain size of Pb(Zr,Ti)O3 thin films by MOCVD and the effect of size on the electrical properties

被引：0
|
作者：
Fujisawa, H [1 ]
Nakashima, S [1 ]
Shimizu, M [1 ]
Niu, H [1 ]
机构：
[1] Himeji Inst Technol, Fac Engn, Dept Elect, Himeji, Hyogo 6712201, Japan
来源：
FERROELECTRIC THIN FILMS VII | 1999年 / 541卷
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The grain size of MOCVD-Pb(Zr,Ti)O-3(PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Zr/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.
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页码：327 / 332
页数：6
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