∼330 nm intense emission from Si-doped Al0.11Ga0.89N/Al0.24Ga0.76N multi-quantum-well structures

被引：0
|
作者：
Hirayama, H [1 ]
Aoyagi, Y [1 ]
机构：
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
来源：
BLUE LASER AND LIGHT EMITTING DIODES II | 1998年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated Si-doped Al0.11Ga0.89N/Al0.24Ga0.76N multi-quantum-well (MQW) structures for UV light-emitting devices using MOCVD. Intense UV (lambda similar to 330nm) photoluminescence (PL) was observed at room temperature from the Si-doped Al0.11Ga0.89N/Al0.24Ga0.76N MQW structures. We investigated systematically the optimized the thickness and the Si- doping concentration of the quantum well region for efficient PL emission. It was found that the largest PL emission was obtained when the well thickness is 3nm and Si-doping concentration of 2 x 10(19)cm(-3).
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页码：258 / 261
页数：4
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  • [1] Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures
    Hey, R
    Han, YJ
    Giehler, M
    Ramsteiner, M
    Grahn, HT
    Ploog, KH
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 219 - 223
  • [2] Optical properties and carrier dynamics of self-assembled GaN/Al0.11Ga0.89N quantum dots
    Ke, W. C.
    Fu, C. P.
    Huang, C. C.
    Ku, C. S.
    Lee, L.
    Chen, C. Y.
    Tsai, W. C.
    Chen, W. K.
    Lee, M. C.
    Chou, W. C.
    Lin, W. J.
    Cheng, Y. C.
    [J]. NANOTECHNOLOGY, 2006, 17 (10) : 2609 - 2613
  • [3] Ni/Ag Schottky contacts on Al0.11Ga0.89N grown on Si (111) substrate by plasma-assisted MBE
    Yusoff, M. Z. Mohd
    Hassan, Z.
    Abu Hassan, H.
    Abdullah, M. J.
    [J]. COMPOSITE INTERFACES, 2015, 22 (02) : 127 - 135
  • [4] Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures
    Hogg, RA
    Norman, CE
    Shields, AJ
    Pepper, M
    Iizuka, N
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (11) : 1428 - 1430
  • [5] Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum wells
    Onuma, T
    Keller, S
    DenBaars, SP
    Speck, JS
    Nakamura, S
    Mishra, UK
    Sota, T
    Chichibu, SF
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (11)
  • [6] Current injection emission at 333 nm from Al0.03Ga0.97N/Al0.25Ga0.75N multi quantum well ultraviolet light emitting diodes
    Kinoshita, A
    Hirayama, H
    Kim, JS
    Ainoya, M
    Hirata, A
    Aoyagi, Y
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 180 (01): : 397 - 401
  • [7] Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
    Monemar, B.
    Paskov, P. P.
    Bergman, J. P.
    Keller, S.
    DenBaars, S. P.
    Mishra, U. K.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (01): : 304 - 308
  • [8] Optical properties of Si-doped AlxGa1-xN/AlyGa1-yN (x = 0.24-0.53, y = 0.11) multi-quantum-well structures
    Hirayama, H
    Aoyagi, Y
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [9] Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
    Jeschke, J.
    Martens, M.
    Hagedorn, S.
    Knauer, A.
    Mogilatenko, A.
    Wenzel, H.
    Zeimer, U.
    Enslin, J.
    Wernicke, T.
    Kneissl, M.
    Weyers, M.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (03)
  • [10] Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity
    Bokhan, P. A.
    Fateev, N. V.
    Malin, T. V.
    Osinnykh, I. V.
    Zakrevsky, D. E.
    Zhuravlev, K. S.
    [J]. JOURNAL OF LUMINESCENCE, 2022, 252
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