Dislocations and stress relaxation in heteroepitaxial films

被引：1
|
作者：
Kubin, LP [1 ]
机构：
[1] Off Natl Etud & Rech Aerosp, CNRS, LEM, F-92322 Chatillon, France
来源：
STRESS AND STRAIN IN EPITAXY: THEORETICAL CONCEPTS, MEASUREMENTS AND APPLICATIONS | 2001年
关键词：
D O I：
10.1016/B978-044450865-2/50005-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A few important elastic properties of dislocations that are relevant for a study of stress relaxation in thin layers are recalled at an elementary level. The elastic interactions of a dislocation with a free surface and an interface are then briefly discussed. The concept of critical thickness for the relaxation of misfit strains in heteroepitaxial films is introduced in a simplified manner. This notion, which makes use of an equilibrium arguments is critically discussed in the last part with emphasis on several kinetic effects and energy barriers, particularly those associated with the mechanisms of dislocation generation and mobility.
引用
收藏
页码：99 / 118
页数：20
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