Sustainable Interfaces between Si Anodes and Garnet Electrolytes for Room-Temperature Solid-State Batteries

被引:64
|
作者
Chen, Cheng [1 ,2 ]
Li, Quan [2 ,3 ]
Li, Yiqiu [1 ]
Cui, Zhonghui [1 ]
Guo, Xiangxin [1 ]
Li, Hong [3 ]
机构
[1] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金; 上海市自然科学基金;
关键词
Si anodes; garnet electrolytes; Si and garnet interfaces; solid-state batteries; in situ SEM; LITHIUM; LI; NANOPARTICLES;
D O I
10.1021/acsami.7b16385
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Solid-state batteries (SSBs) have seen a resurgence of research interests in recent years for their potential to offer high energy density and excellent safety far beyond current commercialized lithium-ion batteries. The compatibility of Si anodes and Ta-doped Li7La3Zr2O12 (Li6.4La3Zr1.4Ta0.6O12, LLZTO) solid electrolytes and the stability of the Si anode have been investigated. It is found that Si layer anodes thinner than 180 nm can maintain good contact with the LLZTO plate electrolytes, leading the Li/LLZTO/Si cells to exhibit excellent cycling performance with a capacity retention over 85% after 100 cycles. As the Si layer thickness is increased to larger than 300 nm, the capacity retention of Li/LLZTO/Si cells becomes 77% after 100 cycles. When the thickness is close to 900 nm, the cells can cycle only for a limited number of times because of the destructive volume change at the interfaces. Because of the sustainable Si/LLZTO interfaces with the Si layer anodes with a thickness of 180 nm, full cells with the LiFePO4 cathodes show discharge capacities of 120 mA h g(-1) for LiFePO4 and 2200 mA h g(-1) for the Si anodes at room temperature. They cycle 100 times with a capacity retention of 72%. These results indicate that the combination between the Si anodes and the garnet electrolytes is a promising strategy for constructing high-performance SSBs.
引用
收藏
页码:2185 / 2190
页数:6
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