Modeling charge transfer at organic donor-acceptor semiconductor interfaces

被引:24
|
作者
Cakir, Deniz [1 ,2 ]
Bokdam, Menno [1 ,2 ]
de Jong, Michel P. [2 ]
Fahlman, Mats [3 ]
Brocks, Geert [1 ,2 ]
机构
[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[3] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
关键词
ENERGY-LEVEL ALIGNMENT; ELECTRONIC-STRUCTURE; HETEROJUNCTION; SEXITHIOPHENE;
D O I
10.1063/1.4717985
中图分类号
O59 [应用物理学];
学科分类号
摘要
We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717985]
引用
收藏
页数:4
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