Micro-photoluminescence spectroscopy of hierarchically self-assembled quantum dots

被引：11
|
作者：
Rastelli, A. [1 ]
Kiravittaya, S. [1 ]
Wang, L. [1 ]
Bauer, C. [1 ]
Schmidt, O. G. [1 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 32卷 / 1-2期
关键词：
quantum dots; hierarchical self-assembly; micro-photoluminescence;
D O I：
10.1016/j.physe.2005.12.098
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Novel, self-assembled quantum dot (QD) structures suitable for single-dot optical spectroscopy are fabricated by combining III-V molecular beam epitaxy and in situ, atomic layer precise etching. Several growth and etching steps are used to produce lateral InAs/GaAs QD bimolecules and unstrained GaAs/AlGaAs QDs with low surface density (less than or similar to 10(8) cm(-2)). Micro-photoluminescence is used to investigate the ensemble and single-QD properties of GaAs QDs. Single-QD spectra show resolution-limited sharp lines at low excitation and broad "shell-structures" at high excitation intensity. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：29 / 32
页数：4
相关论文
共 50 条
  • [41] Effects of GaAs on photoluminescence properties of self-assembled InAs quantum dots
    Wang, XQ
    Zhang, YJ
    Du, GT
    Li, XJ
    Yin, JZ
    Chen, WY
    Yang, SR
    [J]. CHINESE PHYSICS LETTERS, 2001, 18 (04) : 579 - 581
  • [42] Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD
    Wong, P. S.
    Liang, B. L.
    Nuntawong, N.
    Tatebayashi, J.
    Huffaker, D. L.
    Dorogan, V. G.
    Mazur, Yu. I.
    Salamo, G. I.
    [J]. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 2485 - +
  • [43] Mindinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots
    Sauvage, S
    Boucaud, P
    Brunhes, T
    Lemaître, A
    Gérard, JM
    [J]. PHYSICAL REVIEW B, 1999, 60 (23) : 15589 - 15592
  • [44] Photoluminescence of self-assembled CdSe quantum dots by molecular beam epitaxy
    Matsumura, N
    Saito, T
    Saraie, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1121 - 1125
  • [45] Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots
    Chahboun, A
    Baidus, NV
    Demina, PB
    Zvonkov, BN
    Gomes, MJM
    Cavaco, A
    Sobole, NA
    Carmo, MC
    Vasilevskiy, MI
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (06): : 1348 - 1352
  • [46] Anti-Stokes photoluminescence in CdSe self-assembled quantum dots
    Yamamoto, A
    Sasao, T
    Goto, T
    Arai, K
    Lee, HY
    Makino, H
    Yao, T
    [J]. 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1246 - 1249
  • [47] Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots
    Ma, Jun
    Ji, Xiaoli
    Wang, Guohong
    Wei, Xuecheng
    Lu, Hongxi
    Yi, Xiaoyan
    Duan, Ruifei
    Wang, Junxi
    Zeng, Yiping
    Li, Jinmin
    Yang, Fuhua
    Wang, Chao
    Zou, Gang
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (13)
  • [48] Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of density
    Ma, Z
    Pierz, K
    Keyser, UF
    Haug, RJ
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 117 - 119
  • [49] Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
    Kiravittaya, S
    Nakamura, Y
    Schmidt, OG
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 224 - 228
  • [50] Photoluminescence and time-resolved photoluminescence studies of self-assembled InAs quantum dots
    Zhang, XH
    Dong, JR
    Chua, SJ
    [J]. MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 223 - 228
12345