Micro-photoluminescence spectroscopy of hierarchically self-assembled quantum dots

被引:11
|
作者
Rastelli, A. [1 ]
Kiravittaya, S. [1 ]
Wang, L. [1 ]
Bauer, C. [1 ]
Schmidt, O. G. [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源
关键词
quantum dots; hierarchical self-assembly; micro-photoluminescence;
D O I
10.1016/j.physe.2005.12.098
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Novel, self-assembled quantum dot (QD) structures suitable for single-dot optical spectroscopy are fabricated by combining III-V molecular beam epitaxy and in situ, atomic layer precise etching. Several growth and etching steps are used to produce lateral InAs/GaAs QD bimolecules and unstrained GaAs/AlGaAs QDs with low surface density (less than or similar to 10(8) cm(-2)). Micro-photoluminescence is used to investigate the ensemble and single-QD properties of GaAs QDs. Single-QD spectra show resolution-limited sharp lines at low excitation and broad "shell-structures" at high excitation intensity. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:29 / 32
页数:4
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