Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

被引：11

作者：

Demoulin, Remi ^{[1
]}

Roussel, Manuel ^{[1
]}

Duguay, Sebastien ^{[1
]}

Muller, Dominique ^{[2
,3
]}

Mathiot, Daniel ^{[2
,3
]}

Pareige, Philippe ^{[1
]}

Talbot, Etienne ^{[1
]}

机构：

[1] Normandie Univ, UNIROUEN, INSA Rouen, CNRS,Grp Phys Mat, F-76000 Rouen, France

[2] Univ Strasbourg, ICube Lab, BP 20, F-67037 Strasbourg, France

[3] CNRS, BP 20, F-67037 Strasbourg, France

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2019年 / 123卷 / 12期

关键词：

SILICON NANOCRYSTALS; PHOTOLUMINESCENCE; PHOSPHORUS; NANOPARTICLES; IMPLANTATION; PASSIVATION; TEMPERATURE; IMPURITIES; TRANSPORT; ENERGY;

D O I：

10.1021/acs.jpcc.8b08620

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Structural properties of undoped, As-doped, and P-doped silicon nanocrystals (Si-Ncs) embedded in a SiO2 matrix have been investigated using atom probe tomography. It turns out that both As and P atomic distributions have the same behavior in such system, withthe efficient incorporation of impurities in the core of Si-Ncs even in the smallest ones (<2 nm). The impurity level measured in Si-Ncs is strongly size-dependent, and statistically, the smallest Si-Ncs can contain the heaviest doping composition. Moreover, this study reveals an influence of the dopant nature on the kinetic growth of Si-Ncs, leading to the clustering of larger nanocrystals in P-doped samples.

引用

页码：7381 / 7389

页数：9

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