Alternating Be and C doping for strain compensated GaAs/AlAs distributed Bragg reflectors

We demonstrate a new type of strain compensated, p-type distributed Bragg reflector (DBR) using alternating doping of Be in GaAs and C in AlAs with carbon concentrations as high as 2x10(20) Cm-3. These DBRs exhibit simultaneously a high crystalline quality, an excellent surface morphology, and no misfit dislocations, which cannot be achieved in undoped or Be-doped DBRs. The absolute optical reflectivity is as high as in the undoped DBR. The differential resistance of these structures is comparable to best reported values in Be-doped DBRs. (C) 1997 American Institute of Physics.