AlGaN GaN dual-gate modulation-doped field-effect transistors

被引：12

作者：

Chen, CH ^{[1
]}

Krishnamurthy, K

Keller, S

Parish, G

Rodwell, M

Mishra, UK

Wu, YF

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] WiTech, Goleta, CA 93117 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 11期

关键词：

D O I：

10.1049/el:19990627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 mu m gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5W/mm at 4GHz. The corresponding large-signal gain is 11.5dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for the broadband power amplifiers.

引用

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页码：933 / 935

页数：3

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