Metallization and interconnection of HTS YBCO thin film devices and circuits

A comprehensive study of specific contact resistivity and ultrasonic wire bonding yield and strength was carried out on noble metal-YBa2Cu3O7-x (YBCO) thin film contacts prepared by a variety of methods and with different YBCO surface conditions. The metallization techniques investigated include in situ and ex situ deposition of gold or silver on YBCO films. The ex situ contacts were made with and without lithographic processes. Contact resistivities of less than 5 x 10(-8) Omega cm(2) at 77 K were achieved for contacts made by the rapid ex situ deposition of gold or silver on fresh YBCO films with smooth surfaces. These contacts also gave a high wire bonding yield and strength of 10-19 g. High contact resistivities in excess of 5 x 10(-4) Omega cm(2) and poor wire bonding yield and strength were observed for the contacts made by standard lithographic lift-off processes on old YBCO films. Surface treatments using either argon ion beam etching or rf O-2 plasma cleaning prior to metallization were found to be useful in reducing the contact resistivity and improving the wire bonding results for the lift-off contacts. The influence of YBCO film morphology on the contact resistance and wire bonding yield and strength was also studied.