A novel micro-accelerometer with adjustable sensitivity based on resonant tunnelling diodes

被引：0
|
作者：
Xiong Ji-Jun [1 ]
Mao Hai-Yang [2 ]
Zhang Wen-Dong [1 ]
Wang Kai-Qun [1 ]
机构：
[1] N Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Peoples R China
[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
CHINESE PHYSICS B | 2009年 / 18卷 / 03期
基金：
芬兰科学院; 中国国家自然科学基金;
关键词：
micro-accelerometer; piezoresistance effect; resonant tunnelling diode (RTD); sensitivity; DOUBLE-BARRIER STRUCTURES; GAAS PRESSURE SENSOR; SUPERLATTICE; GHZ;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current-voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.
引用
收藏
页码：1242 / 1247
页数：6
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