Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

被引：5
|
作者：
Wang, GS [1 ]
Meng, XJ [1 ]
Lai, ZQ [1 ]
Yu, J [1 ]
Sun, JL [1 ]
Cheng, JG [1 ]
Tang, J [1 ]
Guo, SL [1 ]
Chu, JH [1 ]
机构：
[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 74卷 / 05期
关键词：
D O I：
10.1007/s003390100941
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
La0.5Sr0.5CoO3 (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr0.5Ti0.5O3 (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3 x 10(9) switching cycles and an internal electric field; the remnant polarization P-r and the coercive field E-c are about 22 muC/cm(2) and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz.
引用
收藏
页码：707 / 710
页数：4
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