Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

被引：0

作者：

Xu, Bing ^{[1
]}

Zhao, Jun Liang ^{[1
]}

Wang, Shu Guo ^{[1
]}

Dai, Hai Tao ^{[1
]}

Yu, Sheng-Fu ^{[2
]}

Lin, Ray-Ming ^{[3
]}

Chu, Fu-Chuan ^{[3
]}

Huang, Chou-Hsiung ^{[3
]}

Sun, Xiao Wei ^{[4
]}

机构：

[1] Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

[2] Natl Cheng Kung Univ, Tainan 701, Taiwan

[3] Changhua Univ, Changhua 500, Taiwan

[4] South Univ Sci & Tech, Taiyuan, Peoples R China

来源：

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII | 2013年 / 8641卷

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

QCSE; Efficiency droop; localized state; MOCVD; PIEZOELECTRIC FIELDS; HIGH-POWER; TEMPERATURE; RECOMBINATION; POLARIZATION; DEPENDENCE; DYNAMICS; TIME;

D O I：

10.1117/12.2001788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

引用

页数：7

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