An audio FIR-DAC in a BCD process for high power Class-D amplifiers

被引:8
|
作者
Doom, TS [1 ]
van Tuijl, E [1 ]
Schinkel, D [1 ]
Annema, AJ [1 ]
Berkhout, M [1 ]
Nauta, B [1 ]
机构
[1] Univ Twente, Grp ICD EWI, NL-7500 AE Enschede, Netherlands
关键词
D O I
10.1109/ESSCIR.2005.1541659
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power Bipolar CMOS DMOS (BCD) process. This facilitates digital input signals for an analog class-D amplifier in BCD. The FIR-DAC performance depends on the ISI-resistant nature of this PWM-signal. An impulse response with only positive coefficients was chosen, because of its resistance to deadzone and mismatch. With a DAC current of 0.5 mA, the dynamic range is 111 dB (A-weighted), with SINAD = 103 dB (A-weighted). The current consumption is I mA for the analog part and 4.8 mA for the digital part. The power consumption is 29 mW at Vdd = 5 V and the chip area is 2 min 2 including the reference diode that can be shared by more channels.
引用
收藏
页码:459 / 462
页数:4
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