Surface preparation of 4° off-axis 4H-SIC substrate for epitaxial growth

被引：12
|
作者：
Li, Xun [1 ]
ul Hassan, Jawad [1 ]
Kordina, Olof [1 ]
Janzen, Erik [1 ]
Henry, Anne [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
Surface preparation; 4H-SiC substrates; CVD; CVD GROWTH; SITU; SILICON; HCL;
D O I：
10.4028/www.scientific.net/MSF.740-742.225
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Results of surface preparation on Si-face 4 degrees off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HCl) and only hydrogen (H-2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 degrees C, 1600 degrees C, 1620 degrees C and 1640 degrees C, were studied. In-situ etching with only H-2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HCl at temperature higher than 1620 degrees C could degrade the substrates surface quality.
引用
收藏
页码：225 / 228
页数：4
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