Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers

被引：0

作者：

董林 ^{[1
]}

孙国胜 ^{[1
,2
]}

俞军 ^{[2
]}

郑柳 ^{[1
]}

刘兴昉 ^{[1
]}

张峰 ^{[1
]}

闫果果 ^{[1
]}

李锡光 ^{[2
]}

王占国 ^{[1
]}

杨霏 ^{[3
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

[2] Dongguan Tianyu Semiconductor,Inc

[3] State Grid Smart Grid Research

来源：

Chinese Physics Letters | 2013年 / 30卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TN304.054 [];

学科分类号：

摘要：

We investigate the triangular defects with different structural features on 4H-SiC epilayers by a Nomarski microscope,a Candela optical surface analyzer and ultraviolet photoluminescence(UV-PL)imaging.Both the foreign particles and the substrate scratches can cause the formation of the obtuse triangular defects.The central area of some obtuse triangular defects can have the spatially confined core,in which the in-grown stacking faults can be observed under the UV-PL imaging.In contrast,the obtuse triangular defects induced by the scratches appear in the form of band-like defects,of which the width depends on the scratch direction and reaches the maximum when the scratch direction is parallel to the step Sow direction.The formation mechanisms of these obtuse triangular defects are discussed.

引用

页码：113 / 115

页数：3

共 50 条

[1] Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers
Dong Lin
Sun Guo-Sheng
Yu Jun
Zheng Liu
Liu Xing-Fang
Zhang Feng
Yan Guo-Guo
Li Xi-Guang
Wang Zhan-Guo
Yang Fei
CHINESE PHYSICS LETTERS, 2013, 30 (09)
[2] Analysis and Reduction of Obtuse Triangular Defects on 150-mm 4° 4H-SiC Epitaxial Wafers
Yongqiang Sun
Gan Feng
Junyong Kang
Jianhui Zhang
Weining Qian
Journal of Electronic Materials, 2018, 47 : 5109 - 5112
[3] Analysis and Reduction of Obtuse Triangular Defects on 150-mm 4° 4H-SiC Epitaxial Wafers
Sun, Yongqiang
Feng, Gan
Kang, Junyong
Zhang, Jianhui
Qian, Weining
JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (09) : 5109 - 5112
[4] Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers
Ishiyama, Osamu
Yamada, Keiichi
Sako, Hideki
Tamura, Kentaro
Kitabatake, Makoto
Senzaki, Junji
Matsuhata, Hirofumi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
[5] Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy grown on 4° Off-Axis 4H-SiC Wafers
Sunkari, Swapna
Das, Hrishikesh
Hoff, Carl
Koshka, Yaroslav
Casady, Janna
Casady, Jeff
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 423 - 426
[6] Origin Analyses of Obtuse Triangular Defects in 4deg.-off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-ray Topography
Yamashita, T.
Matsuhata, H.
Miyasaka, Y.
Ohshima, H.
Sekine, M.
Momose, K.
Sato, T.
Kitabatake, M.
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 649 - +
[7] Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates
Yazdanfar, M.
Ivanov, I. G.
Pedersen, H.
Kordina, O.
Janzen, E.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (22)
[8] Surface preparation of 4° off-axis 4H-SIC substrate for epitaxial growth
Li, Xun
ul Hassan, Jawad
Kordina, Olof
Janzen, Erik
Henry, Anne
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 225 - 228
[9] Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
Leone, S.
Pedersen, H.
Henry, A.
Kordina, O.
Janzen, E.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (12) : 3265 - 3272
[10] Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices
Li Zhe-Yang
Han Ping
Li Yun
Ni Wei-Jiang
Bao Hui-Qiang
Li Yu-Zhu
CHINESE PHYSICS LETTERS, 2011, 28 (09)

← 1 2 3 4 5 →