Compact Models and Model Standard for 2.5D and 3D Integration

被引:0
|
作者
Zou, Qiaosha [1 ]
Xie, Yuan [1 ]
机构
[1] Penn State Univ, Comp Sci & Engn, University Pk, PA 16802 USA
来源
2014 ACM/IEEE INTERNATIONAL WORKSHOP ON SYSTEM LEVEL INTERCONNECT PREDICTION (SLIP) | 2014年
基金
美国国家科学基金会;
关键词
D O I
10.1145/2633948.2633955
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
3D integration is an emerging interconnect technology that can enable the continuation of performance scaling and the reduction of form factors. There are various approaches for 3D integration, including system-in-package (SiP), TSV-based 3D ICs, monolithic 3D ICs, and inductance/capacitance coupling 3D ICs, among which TSV-based 3D IC is the most promising one. This paper provides a summary of previous work on electrical modelings for 3D IC, with an emphasis on two key interconnect approaches: TSVs and RDLs. Based on prior work, we describe a compact model standard to facilitate a generic modeling approach for future 3D ICs.
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页数:7
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