Significantly enhanced energy storage performance of flexible composites using sodium bismuth titanate based lead-free fillers

被引:29
|
作者
Yang, Pingan [1 ]
Li, Lili [1 ]
Yuan, Hongbin [1 ]
Wen, Fei [1 ]
Zheng, Peng [1 ]
Wu, Wei [1 ]
Zhang, Lin [2 ,3 ]
Wang, Gaofeng [1 ]
Xu, Zhuo [1 ,2 ,3 ]
机构
[1] Hangzhou Dianzi Univ, Coll Elect & Informat, Minist Educ, Engn Res Ctr Smart Microsensors & Microsyst, Hangzhou 310018, Peoples R China
[2] Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Peoples R China
[3] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Xian 710049, Peoples R China
关键词
HIGH DIELECTRIC-CONSTANT; POLYMER NANOCOMPOSITES; DENSITY; NANOFIBERS; PERMITTIVITY; CAPACITORS; EFFICIENCY; CERAMICS; FILMS;
D O I
10.1039/d0tc02377a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Flexible dielectric capacitors, especially polymer-based composites, have received increasing attention for use in sustainable energy and high power applications. Here, a strategy is proposed to combine antiferroelectric and relaxor features to achieve flexible films with high dielectric permittivity and energy-storage density. Based on this motivation, a lead-free dielectric ceramic Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 (NBT-SBT) was investigated and the corresponding thin-film composites were fabricated. A record-high energy density of 15.3 J cm(-3) at 500 MV m(-1), together with a high dielectric permittivity of 10-12, was achieved by the 4 wt% NBT-SBT/PVDF composite, which is 3 times that of PVDF. Furthermore, the composite films exhibit both excellent fatigue resistance and cycle stability. In addition, the COMSOL simulation proves that the composite composed of 4 wt% fillers has the best resistance to breakdown strength, which is consistent with the experimental results. Utilizing fillers with antiferroelectric and relaxor features to obtain high energy density in dielectric composites will provide new perspective and understanding for dielectric energy storage devices, which is highly desired for the next revolution of advanced electronics.
引用
收藏
页码:14910 / 14918
页数:9
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