Quasistatic compact modelling of organic thin-film transistors

被引：40
|
作者：
Marinov, Ognian [1 ]
Deen, M. Jamal [1 ]
机构：
[1] McMaster Univ, Elect & Comp Engn Dept, Hamilton, ON L8S 4K1, Canada
来源：
ORGANIC ELECTRONICS | 2013年 / 14卷 / 01期
关键词：
Compact modelling of OTFTs; Capacitance modelling; Charge modelling; OTFTs; OTFT simulation; FIELD-EFFECT TRANSISTORS; INSULATOR-SEMICONDUCTOR STRUCTURES; POLYMER INTEGRATED-CIRCUITS; ELECTRICAL-PROPERTIES; CAPACITANCE; VOLTAGE; PERFORMANCE; SIMULATION; INTERFACE; MESFETS;
D O I：
10.1016/j.orgel.2012.10.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A compact model for the quasistatic charge and capacitances in organic thin-film transistor (OTFT) is derived and implemented for the simulation of organic circuits. A model for organic ring oscillator circuits is also developed. Comparing the models to experimental data, the simulation qualitatively reproduces the experimental data for frequency, amplitudes and waveforms. The simulation results indicate that the quasistatic model underestimates the capacitances in organic circuits, and it is shown that the geometrical capacitances originating from layout and gate overlap dominate in organic ring oscillators. (c) 2012 Elsevier B.V. All rights reserved.
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页码：295 / 311
页数：17
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