Intrinsic contributions to the planar Hall effect in Fe and Fe3Si films on GaAs substrates

被引:14
|
作者
Friedland, KJ [1 ]
Bowen, M [1 ]
Herfort, J [1 ]
Schönherr, HP [1 ]
Ploog, KH [1 ]
机构
[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany
关键词
D O I
10.1088/0953-8984/18/9/004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We show that the antisymmetric planar Hall effect in Fe and Fe3Si layers grown on GaAs(113)A substrates and the symmetric intrinsic planar Hall effect in Fe3Si on GaAs(001) are closely related to each other. These effects appear in conjunction with additional contributions to the anomalous Hall effect, which reflect the magnetic field-induced crystalline anisotropy upon atomic ordering of the crystal. In the context of recent theoretical studies based on the Berry phase and the spin chirality, we explain the behaviour of the planar Hall effect with a microscopic model that takes into account dynamic non-coplanar spin configurations. We analyse such non-coplanar spin configurations, which are in accordance with the symmetry of the investigated systems, and find a good correspondence with experimental results.
引用
收藏
页码:2641 / 2653
页数:13
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