200 kVA Compact IGBT Modules with Double-Sided Cooling for HEV and EV

被引:0
|
作者
Chang, Hsueh-Rong [1 ]
Bu, Jiankang [1 ]
Hauenstein, Henning [1 ]
Wittmann, Michael [1 ]
Marcinkowski, Jack [1 ]
Pavier, Mark [2 ]
Palmer, Scott [2 ]
Tompkins, Jim [3 ]
机构
[1] Int Rectifier Corp, Automot Prod Business Unit, 101 N Sepulveda Blvd, El Segundo, CA 90245 USA
[2] Int Rectifier Corp, Adv Packaging, El Segundo, CA 90245 USA
[3] Int Rectifier Corp, Elect Mot Syst, El Segundo, CA 90245 USA
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暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called (COOLiRDIE)-D-2 (TM) has a small area of 28.5 mm x 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.
引用
收藏
页码:299 / 302
页数:4
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